• TSV Interposer
Interposer process flow

Specification
Layer Parameter TSV Interposer
Silicon Size 200mm
TSV Via Diameter 50 ~ 100 ㎛
Via Depth 150 ~ 250 ㎛
Via Pitch ≥100 ㎛
AR ≤3 : 1 @70um via
Insulator SiO2, SiNx (option)
Cu Fill Full Fill
Passivation Material Polyimide
Thickness ≥5㎛
RDL Metal Material Copper
Thickness ≥5 ㎛
L/S 10 / 10㎛
Solder Bump Material SnAg
Ball Size Below 250 ㎛
Height Below 200 ㎛
Feature
  • – TSV and Multilayer Redistributed Cu with Passivation
    – Through Via architecture
    – Available on 8inch Si wafer
    – Single and Both Redistribution Layers on Cu/PI
    – 150㎛ ~ 250㎛ Si Thickness
    – Typical Via Diameter is 50㎛ ~ 100㎛ with AR 3:1
    – Process : Via First → Grinding → Dual Plating
Customizing FAB service : Equipment infrastructure
Process Equipment Wafer Size Type Material
200mm 300mm Flat Notch Silicon Glass
Lihtography Stepper
Manual Coating
Coater
Via etching Deep Si Etcher
Via Isolation Furnace(Only oxide)
PE-CVD
Metallization PVD(Sputter)
Electro plating
Etching ICP Etcher / Ashing